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Defect-free Si thinning by in-situ HCl vapour etching

dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorRichard, Olivier
dc.contributor.authorVerheyen, Peter
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-14T22:14:33Z
dc.date.available2021-10-14T22:14:33Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6551
dc.sourceIIOimport
dc.titleDefect-free Si thinning by in-situ HCl vapour etching
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecVerheyen, Peter::0000-0002-8245-9442
dc.source.peerreviewno
dc.source.conferenceASM Users Meeting
dc.source.conferencedate26/09/2002
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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