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The 1/f1.7 noise in submicron SOI MOSFETs with 2.5 nm nitrided oxide

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorPetrichuk, M.
dc.contributor.authorGarbar, N.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T22:16:14Z
dc.date.available2021-10-14T22:16:14Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6560
dc.sourceIIOimport
dc.titleThe 1/f1.7 noise in submicron SOI MOSFETs with 2.5 nm nitrided oxide
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage2367
dc.source.endpage2370
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue12
dc.source.volume49
imec.availabilityPublished - imec


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