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On the origin of the 1/f1.7 noise in deep submicron partially depleted SOI transistors

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorPetrichuk, M.
dc.contributor.authorGarbar, N.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T22:16:26Z
dc.date.available2021-10-14T22:16:26Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6561
dc.sourceIIOimport
dc.titleOn the origin of the 1/f1.7 noise in deep submicron partially depleted SOI transistors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage75
dc.source.endpage78
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
imec.availabilityPublished - open access


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