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Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

dc.contributor.authorMarchand, B.
dc.contributor.authorCretu, B.
dc.contributor.authorGhibaudo, G.
dc.contributor.authorBalestra, F.
dc.contributor.authorBlachier, D.
dc.contributor.authorLeroux, C.
dc.contributor.authorDeleonibus, S.
dc.contributor.authorGuegan, G.
dc.contributor.authorReimbold, G.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T22:18:33Z
dc.date.available2021-10-14T22:18:33Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6573
dc.sourceIIOimport
dc.titleSecondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures
dc.typeJournal article
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage337
dc.source.endpage342
dc.source.journalSolid-State Electronics
dc.source.issue3
dc.source.volume46
imec.availabilityPublished - open access


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