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Influence of surface treatments on DC-performance of GaN-based HFETs

dc.contributor.authorMistele, D.
dc.contributor.authorRotter, T.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorMarso, M.
dc.contributor.authorRoll, H.
dc.contributor.authorKlausing, H.
dc.contributor.authorFedler, F.
dc.contributor.authorSemchinova, O.K.
dc.contributor.authorAderhold, J.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorGraul, J.
dc.date.accessioned2021-10-14T22:25:47Z
dc.date.available2021-10-14T22:25:47Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6611
dc.sourceIIOimport
dc.titleInfluence of surface treatments on DC-performance of GaN-based HFETs
dc.typeMeeting abstract
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage119
dc.source.conferenceInternational Workshop on Nitride Semiconductors
dc.source.conferencedate22/07/2002
dc.source.conferencelocationAachen Germany
imec.availabilityPublished - open access


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