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Behavior of n-Si electrical parameters after a high-temperature 1 MeV electron irradiation

dc.contributor.authorNeimash, V.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKras'ko, N.
dc.contributor.authorVoitovych, V.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T22:31:04Z
dc.date.available2021-10-14T22:31:04Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6638
dc.sourceIIOimport
dc.titleBehavior of n-Si electrical parameters after a high-temperature 1 MeV electron irradiation
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference2nd International Conference on Materials and Coatings for Extreme Performances
dc.source.conferencedate16/09/2002
dc.source.conferencelocationCrimea Ukraine
imec.availabilityPublished - imec


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