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Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K

dc.contributor.authorNicolett, A.S.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T22:32:42Z
dc.date.available2021-10-14T22:32:42Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6646
dc.sourceIIOimport
dc.titleInfluence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage430
dc.source.endpage436
dc.source.conferenceProceedings of the 17th International Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate9/09/2002
dc.source.conferencelocationPorto Allegre Brazil
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2002-8


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