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Degradation behaviors for high temperature irradiated NPN Si transistors

dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, K.
dc.contributor.authorNishiyama, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T22:35:40Z
dc.date.available2021-10-14T22:35:40Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6661
dc.sourceIIOimport
dc.titleDegradation behaviors for high temperature irradiated NPN Si transistors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage89
dc.source.endpage92
dc.source.conferenceProceedings of the 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications
dc.source.conferencedate9/10/2002
dc.source.conferencelocationTakasaki Japan
imec.availabilityPublished - imec


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