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Degradation behavior for high-temperature irradiated npn Si transistors

dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, T.
dc.contributor.authorNishiyana, E.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T22:35:51Z
dc.date.available2021-10-14T22:35:51Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6662
dc.sourceIIOimport
dc.titleDegradation behavior for high-temperature irradiated npn Si transistors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage89
dc.source.endpage92
dc.source.conferenceProceedings 5th International Workshop on Radiation Effects in Semiconductor Devices for Space Applications
dc.source.conferencedate9/10/2002
dc.source.conferencelocationTakasaki Japan
imec.availabilityPublished - imec


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