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Influence of irradiation temperature on electron-irradiated STI Si diodes

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorTakakura, K.
dc.contributor.authorMiura, T.
dc.contributor.authorJono, T.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPoyai, Amporn
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T22:36:30Z
dc.date.available2021-10-14T22:36:30Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6665
dc.sourceIIOimport
dc.titleInfluence of irradiation temperature on electron-irradiated STI Si diodes
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage299
dc.source.endpage302
dc.source.conferenceProceedings of the 4th International Conference on Materials for Microelectronics
dc.source.conferencedate10/06/2002
dc.source.conferencelocationEspoo Finland
imec.availabilityPublished - imec
imec.internalnotesWill also be publ. in: J. Materials Science: Materials in Electronics; Vol. 14(2003)451


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