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Comparison between 0.13 μm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K

dc.contributor.authorPavanello, M.A.
dc.contributor.authorMartino, J.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T22:44:06Z
dc.date.available2021-10-14T22:44:06Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6703
dc.sourceIIOimport
dc.titleComparison between 0.13 μm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage205
dc.source.endpage212
dc.source.conferenceProceedings of the 17th International Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate9/09/2002
dc.source.conferencelocationPorto Allegre Brazil
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2002-8


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