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Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy

dc.contributor.authorPeto, G.
dc.contributor.authorMolnar, G.
dc.contributor.authorKotai, E.
dc.contributor.authorDezsi, I.
dc.contributor.authorKarsteen, M.
dc.contributor.authorSodervall, U.
dc.contributor.authorWillander, M.
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-14T22:45:12Z
dc.date.available2021-10-14T22:45:12Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6708
dc.sourceIIOimport
dc.titleFormation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage37
dc.source.endpage39
dc.source.journalApplied Physics Letters
dc.source.issue1
dc.source.volume81
imec.availabilityPublished - imec


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