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Influence of the nucleation layer growth pressure on GaN growth by MOCVD

dc.contributor.authorRamloll, C.S.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorBarnard, J.S.
dc.contributor.authorHumphreys, C.J.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T22:54:04Z
dc.date.available2021-10-14T22:54:04Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6751
dc.sourceIIOimport
dc.titleInfluence of the nucleation layer growth pressure on GaN growth by MOCVD
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage75
dc.source.endpage76
dc.source.conferenceProceedings ICEM15, the 15th International Congress on Electron Microscopy
dc.source.conferencedate1/09/2002
dc.source.conferencelocationDurban South-Africa
imec.availabilityPublished - imec


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