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Silicon-rich oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot-carrier type non-volatile-memory cells

dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorSleeckx, Erik
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T22:58:21Z
dc.date.available2021-10-14T22:58:21Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6772
dc.sourceIIOimport
dc.titleSilicon-rich oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot-carrier type non-volatile-memory cells
dc.typeProceedings paper
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage189
dc.source.endpage192
dc.source.conferenceIEDM Technical Digest
dc.source.conferencedate9/12/2002
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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