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Effects of boron and germanium base profiles on SiGe and SiGe:C BJT characteristics

dc.contributor.authorSadovnikov, A.
dc.contributor.authorPrinty, C.
dc.contributor.authorBudri, T.
dc.contributor.authorLoo, Roger
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorEl-Diwany, M.
dc.date.accessioned2021-10-14T23:00:45Z
dc.date.available2021-10-14T23:00:45Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6783
dc.sourceIIOimport
dc.titleEffects of boron and germanium base profiles on SiGe and SiGe:C BJT characteristics
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage611
dc.source.endpage614
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
imec.availabilityPublished - open access


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