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Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

dc.contributor.authorSatta, Alessandra
dc.contributor.authorSchuhmacher, Jörg
dc.contributor.authorWhelan, Caroline
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBrongersma, Sywert
dc.contributor.authorBeyer, Gerald
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorViitanen, M.M.
dc.contributor.authorBrongersma, H.H.
dc.contributor.authorBesling, Wim
dc.date.accessioned2021-10-14T23:02:52Z
dc.date.available2021-10-14T23:02:52Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6792
dc.sourceIIOimport
dc.titleGrowth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorBrongersma, Sywert
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecBrongersma, Sywert::0000-0002-1755-3897
dc.source.peerreviewno
dc.source.beginpage7641
dc.source.endpage7646
dc.source.journalJournal of Applied Physics
dc.source.issue12
dc.source.volume92
imec.availabilityPublished - imec


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