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Electrical properties and noise of poly SiGe deposited at temperatures compatible with MEMS integration on top of standard CMOS

dc.contributor.authorSedky, Sherif
dc.date.accessioned2021-10-14T23:07:44Z
dc.date.available2021-10-14T23:07:44Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6815
dc.sourceIIOimport
dc.titleElectrical properties and noise of poly SiGe deposited at temperatures compatible with MEMS integration on top of standard CMOS
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage83
dc.source.endpage88
dc.source.conferenceBioMEMS and Bionanotechnology
dc.source.conferencedate1/04/2002
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Proceedings; Vol. 729


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