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The behaviour of oxygen in oxygenated n-type high-resistivity float-zone silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorJob, R.
dc.contributor.authorUlyashin, A. G.
dc.contributor.authorFahrner, W. R.
dc.contributor.authorTonelli, G.
dc.contributor.authorDegryse, O.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-14T23:10:44Z
dc.date.available2021-10-14T23:10:44Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6829
dc.sourceIIOimport
dc.titleThe behaviour of oxygen in oxygenated n-type high-resistivity float-zone silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage912
dc.source.endpage924
dc.source.conferenceSemiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology
dc.source.conferencedate13/05/2002
dc.source.conferencelocationPhiladelphia, PA USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2002-2


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