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Radiation defects and carrier lifetime in tin-doped n-type silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorKraitchinskii, A. M.
dc.contributor.authorKras'ko, M. M.
dc.contributor.authorNeimash, V. B.
dc.contributor.authorShpinar, L. I.
dc.date.accessioned2021-10-14T23:11:11Z
dc.date.available2021-10-14T23:11:11Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6831
dc.sourceIIOimport
dc.titleRadiation defects and carrier lifetime in tin-doped n-type silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage425
dc.source.endpage430
dc.source.conferenceGADEST - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology
dc.source.conferencedate30/09/2001
dc.source.conferencelocationS. Tecla Italy
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vols. 82-84


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