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dc.contributor.authorVan Daele, B.
dc.contributor.authorVan Tendeloo, G.
dc.contributor.authorGermain, Marianne
dc.contributor.authorLeys, Maarten
dc.contributor.authorBougrioua, Z.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T23:29:22Z
dc.date.available2021-10-14T23:29:22Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6914
dc.sourceIIOimport
dc.titleRelation between microstructure and 2DEG properties in AlGaN/GaN structures
dc.typeMeeting abstract
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage315
dc.source.conferenceInternational Workshop on Nitride Semiconductors
dc.source.conferencedate22/07/2002
dc.source.conferencelocationAachen Germany
imec.availabilityPublished - open access


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