Influence of silicon nitride passivation on DC and behaviour of InP HEMTs
dc.contributor.author | Vandersmissen, Raf | |
dc.contributor.author | Schreurs, Dominique | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-14T23:42:21Z | |
dc.date.available | 2021-10-14T23:42:21Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/6972 | |
dc.source | IIOimport | |
dc.title | Influence of silicon nitride passivation on DC and behaviour of InP HEMTs | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Schreurs, Dominique | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 172 | |
dc.source.endpage | 176 | |
dc.source.conference | 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Appications - EDMOCMOVPE | |
dc.source.conferencedate | 18/11/2002 | |
dc.source.conferencelocation | Manchester UK | |
imec.availability | Published - open access |