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Profile changes and self-sputtering during low energy ion implantation

dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorJanssens, Tom
dc.contributor.authorBrijs, Bert
dc.contributor.authorLindsay, Richard
dc.contributor.authorCollart, E.J.H.
dc.contributor.authorKirkwood, D.A.
dc.contributor.authorMathot, G.
dc.contributor.authorTerwagne, G.
dc.date.accessioned2021-10-14T23:45:46Z
dc.date.available2021-10-14T23:45:46Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6987
dc.sourceIIOimport
dc.titleProfile changes and self-sputtering during low energy ion implantation
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpageC7.2
dc.source.conferenceSilicon Front-End Junction Formation Technologies
dc.source.conferencedate1/04/2002
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Proceedings; Vol. 717


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