Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures

dc.contributor.author	Kol'dyaev, Victor
dc.date.accessioned	2021-09-29T13:08:26Z
dc.date.available	2021-09-29T13:08:26Z
dc.date.issued	1995
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/705
dc.source	IIOimport
dc.title	Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures
dc.type	Journal article
dc.date.embargo	9999-12-31
dc.source.peerreview	no
dc.source.beginpage	446
dc.source.endpage	53
dc.source.journal	Nuclear Instruments and Methods in Physics Research B
dc.source.issue	4
dc.source.volume	103
imec.availability	Published - open access