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Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon

dc.contributor.authorKol'dyaev, Victor
dc.date.accessioned2021-09-29T13:08:28Z
dc.date.available2021-09-29T13:08:28Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/706
dc.sourceIIOimport
dc.titleImpact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage125
dc.source.endpage128
dc.source.conference18th International Semiconductor Conference. CAS'95 Proceedings
dc.source.conferencedate10/10/1995
dc.source.conferencelocationSinaia Romania
imec.availabilityPublished - open access


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