dc.contributor.author | Xu, Zhen | |
dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Carter, Richard | |
dc.contributor.author | Naili, Mohamed | |
dc.contributor.author | De Gendt, Stefan | |
dc.contributor.author | Heyns, Marc | |
dc.date.accessioned | 2021-10-15T00:05:58Z | |
dc.date.available | 2021-10-15T00:05:58Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7071 | |
dc.source | IIOimport | |
dc.title | Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks | |
dc.type | Journal article | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | De Gendt, Stefan | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
dc.source.peerreview | no | |
dc.source.beginpage | 10127 | |
dc.source.endpage | 10129 | |
dc.source.journal | Journal of Applied Physics | |
dc.source.issue | 12 | |
dc.source.volume | 91 | |
imec.availability | Published - imec | |