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Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

dc.contributor.authorXu, Zhen
dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T00:06:12Z
dc.date.available2021-10-15T00:06:12Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7072
dc.sourceIIOimport
dc.titlePolarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage1975
dc.source.endpage1977
dc.source.journalApplied Physics Letters
dc.source.issue11
dc.source.volume80
imec.availabilityPublished - imec


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