Show simple item record

Anomalous low-temperature dopant diffusion from in-situ doped polycrystalline and epitaxial Si layers into the monocrystalline Si substrate

dc.contributor.authorCaymax, Matty
dc.contributor.authorBaert, Kris
dc.contributor.authorPoortmans, Jef
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-09-29T12:40:03Z
dc.date.available2021-09-29T12:40:03Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/70
dc.sourceIIOimport
dc.titleAnomalous low-temperature dopant diffusion from in-situ doped polycrystalline and epitaxial Si layers into the monocrystalline Si substrate
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage387
dc.source.endpage390
dc.source.journalJ. Vac. Sci. Technol. B
dc.source.issue1
dc.source.volume12
imec.availabilityPublished - imec
imec.internalnotesPapers from the 2nd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors. Research Triangle Park, USA. March 23-25, 1993.


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record