Show simple item record

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

dc.contributor.authorZhichun, Wang
dc.contributor.authorAckaert, J.
dc.contributor.authorSalm, C.
dc.contributor.authorde Backer, E.
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorZawalski, Wade
dc.date.accessioned2021-10-15T00:15:28Z
dc.date.available2021-10-15T00:15:28Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7109
dc.sourceIIOimport
dc.titleCorrelation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide
dc.typeProceedings paper
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.source.peerreviewno
dc.source.beginpage242
dc.source.endpage245
dc.source.conferenceProceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate8/07/2002
dc.source.conferencelocationSingapore
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record