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Conference contributions
Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide
Publication:
Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide
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Date
2002
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhichun, Wang
;
Ackaert, J.
;
Salm, C.
;
de Backer, E.
;
Van den Bosch, Geert
;
Zawalski, Wade
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1900
since deposited on 2021-10-15
Acq. date: 2025-12-10
Citations
Metrics
Views
1900
since deposited on 2021-10-15
Acq. date: 2025-12-10
Citations