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Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

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dc.contributor.authorZhichun, Wang
dc.contributor.authorAckaert, J.
dc.contributor.authorSalm, C.
dc.contributor.authorde Backer, E.
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorZawalski, Wade
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.date.accessioned2021-10-15T00:15:28Z
dc.date.available2021-10-15T00:15:28Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7109
dc.source.beginpage242
dc.source.conferenceProceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate8/07/2002
dc.source.conferencelocationSingapore
dc.source.endpage245
dc.title

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

dc.typeProceedings paper
dspace.entity.typePublication
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