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Sub 0.1 mm nMOSFETs fabricated using experimental design techniques to optimise performance and minimise process sensitivity

dc.contributor.authorKubicek, Stefan
dc.contributor.authorBiesemans, Serge
dc.contributor.authorWang, Qingfeng
dc.contributor.authorMaex, Karen
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-09-29T13:08:38Z
dc.date.available2021-09-29T13:08:38Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/710
dc.sourceIIOimport
dc.titleSub 0.1 mm nMOSFETs fabricated using experimental design techniques to optimise performance and minimise process sensitivity
dc.typeProceedings paper
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage105
dc.source.endpage106
dc.source.conference1995 Symposium on VLSI Technology. Digest of Technical Papers; 6-8 June 1995; Kyoto, Japan.
dc.source.conferencelocation
imec.availabilityPublished - imec


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