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Precursor penetration and sealing of porous CVD SiCOH low k dielectric for atomic layer deposition of WCxNy

dc.contributor.authorAbell, Thomas
dc.contributor.authorShamiryan, Denis
dc.contributor.authorSchuhmacher, Jörg
dc.contributor.authorBesling, W.
dc.contributor.authorSutcliffe, V.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T03:58:30Z
dc.date.available2021-10-15T03:58:30Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7113
dc.sourceIIOimport
dc.titlePrecursor penetration and sealing of porous CVD SiCOH low k dielectric for atomic layer deposition of WCxNy
dc.typeProceedings paper
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage717
dc.source.endpage723
dc.source.conferenceProceedings of the Advanced Metallization Conference 2002
dc.source.conferencedate1/10/2002
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - open access


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