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High resolution scanning spreading resistance microscopy of fully depleted silicon-on-insulator devices and double-gate transistors

dc.contributor.authorAlvarez, David
dc.contributor.authorFouchier, Marc
dc.contributor.authorHartwich, J.
dc.contributor.authorEyben, Pierre
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T03:58:46Z
dc.date.available2021-10-15T03:58:46Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7132
dc.sourceIIOimport
dc.titleHigh resolution scanning spreading resistance microscopy of fully depleted silicon-on-insulator devices and double-gate transistors
dc.typeMeeting abstract
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage184
dc.source.conference7th International Workshop on Fabrication, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
dc.source.conferencedate27/04/2003
dc.source.conferencelocationSanta Cruz, CA USA
imec.availabilityPublished - imec


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