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dc.contributor.authorAresu, Stefano
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorKnuyt, G.
dc.contributor.authorMertens, Jan
dc.contributor.authorManca, Jean
dc.contributor.authorDe Schepper, Luc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorD'Olieslaeger, Marc
dc.contributor.authorD'Haen, Jan
dc.date.accessioned2021-10-15T03:59:02Z
dc.date.available2021-10-15T03:59:02Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7145
dc.sourceIIOimport
dc.titleA new method for the analysis of high-resolution SILC data
dc.typeJournal article
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorMertens, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorD'Olieslaeger, Marc
dc.contributor.imecauthorD'Haen, Jan
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1483
dc.source.endpage1488
dc.source.journalMicroelectronics Reliability
dc.source.issue9_11
dc.source.volume43
imec.availabilityPublished - open access
imec.internalnotesPaper from the 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, October 2003


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