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Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities

dc.contributor.authorCaymax, Matty
dc.contributor.authorPoortmans, Jef
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorLibezny, Milan
dc.contributor.authorNijs, Johan
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-09-29T12:40:04Z
dc.date.available2021-09-29T12:40:04Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/71
dc.sourceIIOimport
dc.titleLow temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage324
dc.source.endpage328
dc.source.journalThin Solid Films
dc.source.issue1_2
dc.source.volume241
imec.availabilityPublished - open access
imec.internalnotesPaper from symposium C of the E-MRS Meeting; May 1993; Strasbourg, France


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