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Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities
Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities