Browsing by author "Libezny, Milan"

Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques

Loo, Roger; Caymax, Matty; Libezny, Milan; Blavier, G.; Brijs, Bert; Geenen, Luc; Vandervorst, Wilfried (2000)

Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with RBS and SIMS

Loo, Roger; Caymax, Matty; Libezny, Milan; Blavier, G.; Brijs, Bert; Geenen, Luc; Vandervorst, Wilfried (1999)

b-FeSi2/Heterojunction properties and their depedence on the b-FeSi2 preparation method

Libezny, Milan; Poortmans, Jef; Vermeulen, Tom; Nijs, Johan; Amesz, Peter Henk; Herz, K.; Powalla, M.; Reinsperger, G. U.; Schmidt, M.; Hoffmann, V.; Lange, H. (1995)

Comparison of bulk and surface passivation properties of plasma nitrides on Si and SiGe solar cells

Said, Khalid; Beaucarne, Guy; Libezny, Milan; Laureys, Wim; Vinckier, Chris; Nijs, Johan; Poortmans, Jef (1997)

Ellipsometric Determination of the Optical Properties of b-FeSi2

Libezny, Milan; Poortmans, Jef; Vanhellemont, Jan; Nijs, Johan; Piel, J. P.; von Känel, H. (1995)

Impact of oxygen related extended defects on silicon diode characteristics

Vanhellemont, Jan; Simoen, Eddy; Kaniava, Arvydas; Libezny, Milan; Claeys, C. (1995)

Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments

Vanhellemont, Jan; Kissinger, G.; Clauws, P.; Kaniava, Arvydas; Libezny, Milan; Gaubas, Eugenijus; Simoen, Eddy; Richter, H.; Claeys, Cor (1996)

Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities

Caymax, Matty; Poortmans, Jef; Van Ammel, Annemie; Libezny, Milan; Nijs, Johan; Mertens, Robert (1994)

Low-temperature passivation for SiGe-alloy solar cells

Said, Khalid; Poortmans, Jef; Libezny, Milan; Caymax, Matty; Nijs, Johan; Mertens, Robert; Vinckier, Chris; Vyncke, Dominique; Seifert, W.; Kittler, M.; Silier, I.; Gutjahr, A.; Konuma, M. (1997)

Morphologies and growth modes of FeSi and beta-FeSi2 layers prepared by rapid thermal annealing

Amesz, Peter Henk; Jorgensen, L. V.; Libezny, Milan; Poortmans, Jef; Nijs, Johan; van Veen, A.; Schut, H.; de Hosson, J. T. M. (1996)

On the recombination activity of oxygen precipitation related lattice defects in silicon

Vanhellemont, Jan; Kaniava, Arvydas; Libezny, Milan; Simoen, Eddy; Kissinger, G.; Gaubas, E.; Claeys, C.; Clauws, P. (1995)

On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1-xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor

Caymax, Matty; Poortmans, Jef; Van Ammel, Annemie; Vanhellemont, Jan; Libezny, Milan; Nijs, Johan; Mertens, Robert (1994)

Single Wavelength and Spectroscopic Ellipsometry Characterization of Ultra-Thin Gate Oxides on Silicon and Comparison with Electrical Results

Tonova, Diana; Depas, Michel; Libezny, Milan; Heyns, Marc; Vanhellemont, Jan (1995)

Solar cell preparation in thin silicon membranes

Libezny, Milan; Poortmans, Jef; Caymax, Matty; Beaucarne, Guy; Laureys, Wim; Nijs, Johan (1997)

Spectroellipsometric characterisation of thin epitaxial Si1-x Gex layers

Libezny, Milan; Caymax, Matty; Brablec, A.; Kubena, J.; Holy, V.; Poortmans, Jef; Nijs, Johan; Vanhellemont, Jan (1995)