Browsing by author "Caymax, Matty"
Now showing items 1-20 of 829
-
200mm Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by CVD
Park, Si-Young; Anisha, R.; Berger, Paul; Loo, Roger; Nguyen, Duy; Takeuchi, Shotaro; Caymax, Matty (2009) -
25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Verheyen, Peter; Collaert, Nadine; Rooyackers, Rita; Loo, Roger; Shamiryan, Denis; De Keersgieter, An; Eneman, Geert; Leys, Frederik; Dixit, Abhisek; Goodwin, Michael; Yim, Yong Sik; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
50 nm high performance strained Si/SiGe pMOS devices with multiple quantum wells
Collaert, Nadine; Verheyen, Peter; De Meyer, Kristin; Loo, Roger; Caymax, Matty (2002) -
6.1 family: the next generation of III-V semiconductors for advanced CMOS applications: epitaxial growth and passivation challenges
Merckling, Clement; Alian, AliReza; Firrincieli, Andrea; Jiang, Sijia; Cantoro, Mirco; Dekoster, Johan; Caymax, Matty; Heyns, Marc (2012) -
A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors
Kuhn, Rudiger; Decoutere, Stefaan; Caymax, Matty; Vleugels, Frank; Verschooten, Eric; Loo, Roger; Loheac, J. L. (1999) -
A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
Decoutere, Stefaan; Kuhn, Rudiger; Vleugels, Frank; Vancuyck, Geert; Caymax, Matty; Mohadjeri, Babak; Deferm, Ludo (1998) -
A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
Decoutere, Stefaan; Vleugels, Frank; Kuhn, Rudiger; Loo, Roger; Caymax, Matty; Jenei, Snezana; Croon, Jeroen; Van Huylenbroeck, Stefaan; Da Rold, Martina; Rosseel, Erik; Chevalier, P.; Coppens, P. (2000) -
A 50 nm vertical Si0.70/Ge0.30/Si0.85/Ge0.15 pMOSFET with an oxide/nitride gate dielectric
Verheyen, Peter; Collaert, Nadine; Caymax, Matty; Loo, Roger; Van Rossum, Marc; De Meyer, Kristin (2001) -
A 70nm vertical Si/Si1-xGex heterojunction pMOSFET with reduced DIBL sensitivity for VLSI applications
Verheyen, Peter; Collaert, Nadine; Caymax, Matty; Loo, Roger; De Meyer, Kristin; Van Rossum, Marc (1999) -
A chemisorbed interfacial layer for seeding atomic layer deposition on graphite
Brown, Anton; Greenwood, John; Lockhart de la Rosa, Cesar Javier; Gonzalez, Miriam C. Rodriguez; Verguts, Ken; Brems, Steven; Zhang, Haodong; Hirsch, Brandon E.; De Gendt, Stefan; Delabie, Annelies; Caymax, Matty; Teyssandier, Joan; De Feyter, Steven (2021) -
A deep-level transient spectroscopy study of silicon Schottky barriers containing a Si-O superlattice
Simoen, Eddy; Jayachandran, Suseendran; Delabie, Annelies; Caymax, Matty; Heyns, Marc (2017) -
A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009) -
A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
Wang, Gang; Loo, Roger; Simoen, Eddy; Souriau, Laurent; Caymax, Matty; Heyns, Marc; Blanpain, Bart (2009-03) -
A new HF vapor native oxide removal process for cluster applications
Sprey, Hessel; Storm, Arjen; Maes, Jan; Granneman, E. H. A.; Hendriks, Marton; Röhr, Erika; Caymax, Matty; Decoutere, Stefaan; Heyns, Marc (1998) -
A new HF vapor process for native oxide removal, suited for cluster applications
Storm, Arjen; Sprey, Hessel; Maes, Jan; Granneman, E.; De Blank, Rene; Röhr, Erika; Caymax, Matty; Heyns, Marc (1999) -
A new technique to fabricate ultra-shallow-junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Peytier, Ivan; Holsteyns, Frank; Kubicek, Stefan; Verheyen, Peter; Lindsay, Richard; Richard, Olivier (2004) -
A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Peytier, Ivan; Holsteyns, Frank; Kubicek, Stefan; Verheyen, Peter; Lindsay, Richard; Richard, Olivier (2003-01) -
A novel deep submicron elevated source/drain MOSFET
Waite, Andrew Michael; Kubicek, Stefan; Howard, Dave; Caymax, Matty; De Meyer, Kristin; Evans, A. (1998) -
A step towards a better understanding of silicon passivated (100) Ge p-channel
Pourtois, Geoffrey; Houssa, Michel; De Jaeger, Brice; Leys, Frederik; Kaczer, Ben; Martens, Koen; Caymax, Matty; Meuris, Marc; Groeseneken, Guido; Heyns, Marc (2007)