Browsing by author "Van Ammel, Annemie"
Now showing items 1-20 of 28
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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Lujan, Guilherme; Houssa, Michel; Schram, Tom; Schaekers, Marc; Van Ammel, Annemie; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2005-06) -
Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Etch process development for FLARE(tm) for dual damascene architecture using a N2/O2 plasma
Thompson, Heike; Vanhaelemeersch, Serge; Maex, Karen; Van Ammel, Annemie; Beyer, Gerald; Coenegrachts, Bart; Vervoort, Iwan; Waeterloos, Joost; Struyf, Herbert; Palmans, Roger; Forester, Lynn (1999) -
Gate-last vs. gate-first technology for aggressively scaled EOT Logic/RF CMOS
Veloso, Anabela; Ragnarsson, Lars-Ake; Cho, Moon Ju; Devriendt, Katia; Kellens, Kristof; Sebaai, Farid; Suhard, Samuel; Brus, Stephan; Crabbe, Yvo; Schram, Tom; Rohr, Erika; Paraschiv, Vasile; Eneman, Geert; Kauerauf, Thomas; Dehan, Morin; Hong, Sug-Hun; Yamaguchi, Shinpei; Takeoka, Shinji; Higuchi, Yuichi; Tielens, Hilde; Van Ammel, Annemie; Favia, Paola; Bender, Hugo; Franquet, Alexis; Conard, Thierry; Li, X.; Pey, K.-L.; Struyf, Herbert; Mertens, Paul; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
Growth evolution and characterization of ultrathin CoGe2 films synthesized via catalytic solid-vapor reaction technique
Peter, Antony; Opsomer, Karl; Adelmann, Christoph; Van Ammel, Annemie; Meersschaut, Johan; Moussa, Alain; Schaekers, Marc; Wen, Liang Gong; Tokei, Zsolt; Van Elshocht, Sven (2014) -
Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Ragnarsson, Lars-Ake; Chew, Soon Aik; Dekkers, Harold; Toledano Luque, Maria; Parvais, Bertrand; De Keersgieter, An; Van Ammel, Annemie; Schram, Tom; Yoshida, Naomi; Phatak, Anup; Han, Keping; Colombeau, Benjamin; Brand, Adam; Horiguchi, Naoto; Thean, Aaron (2014) -
Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodes
Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Higuchi, Yuichi; Lee, Jae Won; Simoen, Eddy; Roussel, Philippe; Cho, Moon Ju; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Brus, Stephan; Dangol, Anish; Paraschiv, Vasile; Vecchio, Emma; Shi, Xiaoping; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Richard, Olivier; Bender, Hugo; Chiarella, Thomas; Arimura, Hiroaki; Thean, Aaron; Horiguchi, Naoto (2013) -
Impact of thinning and through silicon via proximity on high-k / metal gate first CMOS performance
Mercha, Abdelkarim; Redolfi, Augusto; Stucchi, Michele; Minas, Nikolaos; Van Olmen, Jan; Thangaraju, Sarasvathi; Velenis, Dimitrios; Domae, Shinichi; Yang, Yu; Katti, Guruprasad; Labie, Riet; Okoro, Chukwudi; Zhao, Ming; Asimakopoulos, Panagiotis; De Wolf, Ingrid; Chiarella, Thomas; Schram, Tom; Rohr, Erika; Van Ammel, Annemie; Jourdain, Anne; Ruythooren, Wouter; Armini, Silvia; Radisic, Alex; Philipsen, Harold; Heylen, Nancy; Kostermans, Maarten; Jaenen, Patrick; Sleeckx, Erik; Sabuncuoglu Tezcan, Deniz; Debusschere, Ingrid; Soussan, Philippe; Perry, Dan; Van der Plas, Geert; Cho, Jong Hoon; Marchal, Pol; Travaly, Youssef; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2010) -
Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers
Redolfi, Augusto; Velenis, Dimitrios; Thangaraju, Sarasvathi; Nolmans, Philip; Jaenen, Patrick; Kostermans, Maarten; Baier, Ulrich; Van Besien, Els; Dekkers, Harold; Witters, Thomas; Jourdan, Nicolas; Van Ammel, Annemie; Vandersmissen, Kevin; Rodet, Simon; Philipsen, Harold; Radisic, Alex; Heylen, Nancy; Travaly, Youssef; Swinnen, Bart; Beyne, Eric (2011-06) -
Implementation of atomic layer deposition in advanced semiconductor processes
Schaekers, Marc; Van Ammel, Annemie; Schuhmacher, Jorg; Delabie, Annelies; Martin Hoyas, Ana; Zhao, Chao (2005) -
Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-Stacked IC integration
Van Olmen, Jan; Huyghebaert, Cedric; Coenen, Jens; Van Aelst, Joke; Sleeckx, Erik; Van Ammel, Annemie; Armini, Silvia; Vaes, Jan; Beyne, Eric; Travaly, Youssef (2010) -
Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities
Caymax, Matty; Poortmans, Jef; Van Ammel, Annemie; Libezny, Milan; Nijs, Johan; Mertens, Robert (1994) -
Metallization options for sub- 30 nm interconnects: comparison of Cu and W metallizations
Carbonell, Laure; Caluwaerts, Rudy; Volders, Henny; Heylen, Nancy; Kellens, Kristof; Mertens, Sofie; Van Ammel, Annemie; Van Roey, Frieda; Cockburn, Andrew; Gravey, Virgine; Shah, Kavita; Rajagopalan, Ravi; Tokei, Zsolt; Beyer, Gerald (2010) -
NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics
Henson, Kirklen; Collaert, Nadine; Demand, Marc; Goodwin, Michael; Brus, Stephan; Rooyackers, Rita; Van Ammel, Annemie; Degroote, Bart; Ercken, Monique; Baerts, Christina; Kottantharayil, Anil; Dixit, Abhisek; Beckx, Stephan; Schram, Tom; Deweerd, Wim; Boullart, Werner; Schaekers, Marc; De Gendt, Stefan; De Meyer, Kristin; Yim, Yong Sik; Hooker, Jacob; Jurczak, Gosia; Biesemans, Serge (2005) -
On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1-xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor
Caymax, Matty; Poortmans, Jef; Van Ammel, Annemie; Vanhellemont, Jan; Libezny, Milan; Nijs, Johan; Mertens, Robert (1994) -
On the thermal stability of physically-vapor-deposited diffusion barriers in 3D through-silicon vias during IC processing
Civale, Yann; Croes, Kristof; Miyamori, Yuichi; Velenis, Dimitrios; Redolfi, Augusto; Thangaraju, Sarasvathi; Van Ammel, Annemie; Cherman, Vladimir; Van der Plas, Geert; Cockburn, Andrew; Gravey, Virginie; Kumar, Nirajan; Cao, Zhitao; Travaly, Youssef; Tokei, Zsolt; Beyne, Eric; Swinnen, Bart (2013) -
Process control & integration options of RMG Technology for aggressively scaled devices
Veloso, Anabela; Higuchi, Yuichi; Chew, Soon Aik; Devriendt, Katia; Ragnarsson, Lars-Ake; Sebaai, Farid; Schram, Tom; Brus, Stephan; Vecchio, Emma; Kellens, Kristof; Rohr, Erika; Eneman, Geert; Simoen, Eddy; Cho, Moon Ju; Paraschiv, Vasile; Crabbe, Yvo; Shi, Xiaoping; Tielens, Hilde; Van Ammel, Annemie; Dekkers, Harold; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; del Agua Borniquel, Jose Ignacio; Xu, K.; Allen, M.; Liu, C.; Xu, T.; Yoo, W.S.; Thean, Aaron; Horiguchi, Naoto (2012) -
Seed-less copper electrochemical deposition on barrier materials as a replacement/enhancement for PVD Cu seed layers in HAR TSVs
Armini, Silvia; Philipsen, Harold; El-Mekki, Zaid; Redolfi, Augusto; Van Ammel, Annemie; Radisic, Alex; Nagar, Magi; Ruythooren, Wouter (2010) -
Seed-less copper electrochemical deposition on PVD resistive substrates as a replacement/enhancement for PVD Cu seed layers in HAR TSVs
Armini, Silvia; Wilson, Chris; Moussa, Alain; Franquet, Alexis; Vanstreels, Kris; Atanasova, Tanya; Radisic, Alex; Civale, Yann; Redolfi, Augusto; Van Ammel, Annemie; El-Mekki, Zaid; Bryce, George; Ruythooren, Wouter (2010)