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Improvement of write/erase cycling of memory cells with SiO2/HfO2 tunnel dielectric

dc.contributor.authorBlomme, Pieter
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T04:02:11Z
dc.date.available2021-10-15T04:02:11Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7225
dc.sourceIIOimport
dc.titleImprovement of write/erase cycling of memory cells with SiO2/HfO2 tunnel dielectric
dc.typeProceedings paper
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage95
dc.source.endpage98
dc.source.conferenceInternational Reliability Workshop Final Report
dc.source.conferencedate13/10/2003
dc.source.conferencelocationLake Tahoe, CA USA
imec.availabilityPublished - imec


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