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Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, Hl) solutions

dc.contributor.authorLi, Li
dc.contributor.authorBender, Hugo
dc.contributor.authorTrenkler, Thomas
dc.contributor.authorMertens, Paul
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-29T13:09:11Z
dc.date.available2021-09-29T13:09:11Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/722
dc.sourceIIOimport
dc.titleSurface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, Hl) solutions
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage1323
dc.source.endpage5
dc.source.journalJournal of Applied Physics
dc.source.issue3
dc.source.volume77
imec.availabilityPublished - imec


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