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Spectroellipsometric characterisation of thin epitaxial Si1-x Gex layers

dc.contributor.authorLibezny, Milan
dc.contributor.authorCaymax, Matty
dc.contributor.authorBrablec, A.
dc.contributor.authorKubena, J.
dc.contributor.authorHoly, V.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorNijs, Johan
dc.contributor.authorVanhellemont, Jan
dc.date.accessioned2021-09-29T13:09:14Z
dc.date.available2021-09-29T13:09:14Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/723
dc.sourceIIOimport
dc.titleSpectroellipsometric characterisation of thin epitaxial Si1-x Gex layers
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1065
dc.source.endpage1070
dc.source.journalMaterials Science and Technology
dc.source.issue10
dc.source.volume11
imec.availabilityPublished - open access
imec.internalnotesPaper presented at the 1st International Conference on Materials for Microelectronics. Barcelona, Spain. 17-19 October 1994.


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