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Defectivity study of Cu metallization process by dark- and bright-field inspection

dc.contributor.authorCarbonell, Laure
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorTokei, Zsolt
dc.contributor.authorO'Reilly, L.
dc.contributor.authorMaex, Karen
dc.contributor.authorMertens, Paul
dc.date.accessioned2021-10-15T04:05:30Z
dc.date.available2021-10-15T04:05:30Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7275
dc.sourceIIOimport
dc.titleDefectivity study of Cu metallization process by dark- and bright-field inspection
dc.typeProceedings paper
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorMertens, Paul
dc.source.peerreviewno
dc.source.beginpage281
dc.source.endpage287
dc.source.conferenceUltra Clean Processing of Silicon Surfaces 2002 - UCPSS
dc.source.conferencedate16/09/2002
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - imec
imec.internalnotesSolid-State Phenomena; Vol. 92


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