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High-Q RF inductors on standard silicon realized using wafer-level packaging techniques

dc.contributor.authorCarchon, Geert
dc.contributor.authorJenei, Snezana
dc.contributor.authorCarbonell, Laure
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorMaex, Karen
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-15T04:05:58Z
dc.date.available2021-10-15T04:05:58Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7281
dc.sourceIIOimport
dc.titleHigh-Q RF inductors on standard silicon realized using wafer-level packaging techniques
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecDe Raedt, Walter::0000-0002-7117-7976
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.source.peerreviewno
dc.source.beginpage1287
dc.source.endpage1290
dc.source.conferenceIEEE International Microwave Symposium Digest - MTT-S
dc.source.conferencedate8/06/2003
dc.source.conferencelocationPhiladelphia, PA USA
imec.availabilityPublished - imec


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