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Interface state passivation in conventional SiO2/HfO2 p-channel FETs

dc.contributor.authorChen, Jerry
dc.contributor.authorPantisano, Luigi
dc.contributor.authorKerber, Andreas
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorCartier, Eduard
dc.date.accessioned2021-10-15T04:08:17Z
dc.date.available2021-10-15T04:08:17Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7309
dc.sourceIIOimport
dc.titleInterface state passivation in conventional SiO2/HfO2 p-channel FETs
dc.typeOral presentation
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewno
dc.source.conferenceInsulating Films on Semiconductors - INFOS. 13th Bi-Annual Conference
dc.source.conferencedate18/06/2003
dc.source.conferencelocationBarcelona Spain
imec.availabilityPublished - imec
imec.internalnotesPresented at Infos 2003 in Barcelona, Spain


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