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A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes

dc.contributor.authorCrupi, F.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T04:13:47Z
dc.date.available2021-10-15T04:13:47Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7366
dc.sourceIIOimport
dc.titleA comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage8
dc.source.endpage13
dc.source.journalIEEE Trans. Device and Materials Reliability
dc.source.issue1
dc.source.volume3
imec.availabilityPublished - open access


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