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Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications

dc.contributor.authorDate, Lucien
dc.contributor.authorRittersma, Chris
dc.contributor.authorMassoubre, D.
dc.contributor.authorPonomarev, Youri
dc.contributor.authorRoozeboom, F.
dc.contributor.authorPique, Didier
dc.contributor.authorVan Autryve, Luc
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-15T04:16:00Z
dc.date.available2021-10-15T04:16:00Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7385
dc.sourceIIOimport
dc.titleElectrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
dc.typeProceedings paper
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorVan Autryve, Luc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.beginpage133
dc.source.endpage136
dc.source.conference14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference - ASMC
dc.source.conferencedate31/03/2003
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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