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A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon

dc.contributor.authorDe Gryse, O.
dc.contributor.authorVanhellemont, J.
dc.contributor.authorClauws, P.
dc.contributor.authorLebedev, O.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T04:18:49Z
dc.date.available2021-10-15T04:18:49Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7408
dc.sourceIIOimport
dc.titleA novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1013
dc.source.endpage1017
dc.source.journalPhysica B
dc.source.volume340-342
imec.availabilityPublished - imec
imec.internalnotesPaper from the 22nd International Conference on Defects in Semiconductors; July 2003; Aarhus, Denmark


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