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The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride

dc.contributor.authorDekkers, Harold
dc.contributor.authorDuerinckx, Filip
dc.contributor.authorDe Wolf, Stefaan
dc.contributor.authorAgostinelli, Guido
dc.contributor.authorSzlufcik, Jozef
dc.date.accessioned2021-10-15T04:28:21Z
dc.date.available2021-10-15T04:28:21Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7485
dc.sourceIIOimport
dc.titleThe influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride
dc.typeProceedings paper
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorDuerinckx, Filip
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecDuerinckx, Filip::0000-0003-2570-7371
dc.source.peerreviewno
dc.source.beginpage1143
dc.source.endpage1146
dc.source.conferenceProceedings 3rd World Conference on Phototvoltaic Energy Conversion
dc.source.conferencedate11/05/2003
dc.source.conferencelocationOsaka Japan
imec.availabilityPublished - imec


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