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ALD HfO2 surface preparation study

dc.contributor.authorDelabie, Annelies
dc.contributor.authorCaymax, Matty
dc.contributor.authorMaes, Jan
dc.contributor.authorBajolet, Philippe
dc.contributor.authorBrijs, Bert
dc.contributor.authorCartier, Eduard
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorZhao, Chao
dc.contributor.authorGreen, Martin
dc.contributor.authorTsai, Wilman
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T04:28:52Z
dc.date.available2021-10-15T04:28:52Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7488
dc.sourceIIOimport
dc.titleALD HfO2 surface preparation study
dc.typeProceedings paper
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage179
dc.source.endpage184
dc.source.conferenceNovel Materials and Processes for Advanced CMOS
dc.source.conferencedate2/12/2002
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 745


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